Method for achieving high pressure using isotopically-pure diamo

Details Method for achieving high pressure using isotopically-pure diamo Method for achieving high pressure using isotopically-pure diamo

1991-10-15

1994-03-22

Noland, Tom

Measuring and testing

Sampler, sample handling, etc.

Sample holder

425 77, G01N 128

Patent

active

052954021

ABSTRACT:
Broadly, the present invention is directed to a method for achieving high pressure wherein a sample is placed between a pair of diamond anvils and the anvils compressed. The improvement comprises forming the anvils from one or more of isotopically-pure .sup.12 C or .sup.13 C diamond. Isotopically-pure .sup.13 C diamond is preferred as it has the highest atomic or bond density parameter of any known material and, therefore, should have the highest hardness also Isotopically-enriched diamond .sup.13 C diamond should find utility as an anvil with higher .sup.13 C contents increasing the hardness of the anvil product. By utilizing isotopically pure diamond anvils, less breakage at current pressures should be realized concomitant with the ability to achieve yet higher pressures.

REFERENCES:
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patent: 3509597 (1970-05-01), Kirk
patent: 3895313 (1975-07-01), Seitz
patent: 4602377 (1986-07-01), Schiferl et al.
patent: 4776223 (1988-10-01), Moss
patent: 4970396 (1990-11-01), Wong
Applied Physics Letters, vol. 47, No. 9, pp. 941-943, Nov. 1985, J. Koskinen et al. "Wear & Hardness of diamondlike coating prepared by ionbeam deposition".
J. Mater. Res, vol. 2, No. 5, pp. 614-617, Sep./Oct. 1987 Arthur L. Ruoff et al. "Synthetic Diamonds produce pressure3 of 125 GPa (1.25 mbar)".
Meyers encyclopedia or physical science and technology, vol. 6, pp. 492-506 published 1987 "High-Pressure Synthesis (Chemistry)" R. H. Wentorf Jr. et al.
Science, vol. 241, Aug. 1988 pp. 913-921 "Low-Pressure Metastable Growth of Diamond and Diamondlike" Phases; John L. Angus et al.
Abstract of Japanese patent 59-164610 published Jan. 24, 1985 vol. 9, No. 17 (C-262) (1740).

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