Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
2010-04-06
2011-11-15
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
C438S680000, C257SE21006, C257SE21027, C257SE21170, C257SE21320, C257SE21217, C257SE21238, C257SE21249, C257SE21267
Reexamination Certificate
active
08058151
ABSTRACT:
A structure includes a substrate having a plurality of scribe line areas surrounding a plurality of die areas. Each of the die areas includes at least one first conductive structure formed over the substrate. Each of the scribe line areas includes at least one active region and at least one non-active region. The active region includes a second conductive structure formed therein. The structure further includes at least one first passivation layer formed over the first conductive structure and second conductive structure, wherein at least a portion of the first passivation layer within the non-active region is removed, whereby die-sawing damage is reduced.
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Jeng Shin-Puu
Tsai Hao-Yi
Duane Morris LLP
Nhu David
Taiwan Semiconductor Manufacturing Co. Ltd.
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