Power semiconductor module and method of manufacturing the same

Details Power semiconductor module and method of manufacturing the same Power semiconductor module and method of manufacturing the same

2009-08-31

2011-11-15

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S714000, C257SE23097

Reexamination Certificate

active

08058722

ABSTRACT:
Disclosed herein is a power semiconductor module. The module includes metal plates each having a first through hole, with an anodic oxidation layer formed on a surface of metal plates and an interior of the first through hole. A cooling member has a second through hole at a position corresponding to the first through hole, and the metal plates are attached to both sides of the cooling member. A circuit layer is formed on the anodic oxidation layer and performs an interlayer connection through a via formed in the first and second through holes. A power device is connected to the circuit layer. A resin encapsulant encloses the circuit layer and the power device. A housing is installed to each of the metal plates to form a sealing space for the resin encapsulant.

REFERENCES:
patent: 4389268 (1983-06-01), Oshima et al.
patent: 6097089 (2000-08-01), Gaku et al.
patent: 6265767 (2001-07-01), Gaku et al.
patent: 7612448 (2009-11-01), Teraki et al.

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