Semiconductor device having insulator film with different prescr

Details Semiconductor device having insulator film with different prescr Semiconductor device having insulator film with different prescr

1973-06-25

1977-03-15

Wojciechowicz, Edward J.

357 34, 357 52, H01L 2972, H01L 2934

Patent

active

040127630

ABSTRACT:
An improved transistor structure having a substrate, base and emitter regions formed in the major surface thereof includes an insulating film having first and second portions. The first portion of the insulating film is formed on the major surface of the substrate covering the pn junctions between the emitter, base and substrate proper, while a second portion of the film is spaced apart from the pn junction. The second portion of the film has a thickness larger than that of the first portion of the film.

REFERENCES:
patent: 3664896 (1972-05-01), Duncan
patent: 3681153 (1972-08-01), Clark et al.
patent: 3784424 (1974-01-01), Chang

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