Power-up circuit for semiconductor memory device

Details Power-up circuit for semiconductor memory device Power-up circuit for semiconductor memory device

2009-06-30

2011-10-11

Donovan, Lincoln (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Synchronizing

C327S142000, C327S198000

Reexamination Certificate

active

08035428

ABSTRACT:
A power-up circuit for a semiconductor memory device includes a voltage division unit configured to divide a power supply voltage, a first power-up generation unit configured to detect a voltage level of a first divided voltage of the voltage division unit during an initial stage of applying a power supply to generate a first power-up signal and a second power-up generation unit configured to detect a voltage level of a second divided voltage of the voltage division unit, after the first power-up signal is generated from the first power-up generation unit, to generate a second power-up signal.

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Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Nov. 30, 2010.

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