Self-protected semiconductor device

Details Self-protected semiconductor device Self-protected semiconductor device

1976-04-19

1977-03-15

Lynch, Michael J.

357 13, 357 20, 357 30, 357 68, H01L 2974

Patent

active

040127613

ABSTRACT:
A self-protected thyristor structure is provided having an auxiliary gate region peripherally located with respect to the semiconductor device so as to provide for the controlled turn-on of the device at the edge thereof in response to increasing edge current densities at the onset of avalanche breakdown. An auxiliary pilot thyristor is provided substantially surrounding the main thyristor structure and including an annular gate electrode surrounding the auxiliary pilot thyristor structure to insure that turn-on occurs substantially simultaneously throughout the extent of the pilot thyristor region.

REFERENCES:
patent: 3408545 (1968-10-01), DeCecco et al.
patent: 3440501 (1969-04-01), Piccone et al.
patent: 3476989 (1969-11-01), Miles et al.
patent: 3590346 (1971-06-01), Bilo et al.
patent: 3622845 (1971-11-01), McIntyre et al.
patent: 3893153 (1975-07-01), Page et al.
patent: 3968512 (1976-07-01), Voss
J. Garrett, "The Evolution of a High-Power Fast-Switching Thyristor," Electrical Engineer, vol. 48, No. 5, May 1971, pp. 33-35.

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