Semiconductor device

Electric power conversion systems – Current conversion – With conductive support mounting

Reexamination Certificate

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C257S690000

Reexamination Certificate

active

08064235

ABSTRACT:
In order to reduce parasitic inductance of a main circuit in a power supply circuit, a non-insulated DC-DC converter is provided including a circuit in which a power MOS•FET for a high-side switch and a power MOS•FET for a low-side switch are connected in series. In the non-insulated DC-DC converter, the power MOS•FET for the high-side switch is formed by a p-channel vertical MOS•FET, and the power MOS•FET for the low-side switch is formed by an n channel vertical MOS•FET. Thus, a semiconductor chip formed with the power MOS•FET for the high-side switch and a semiconductor chip formed with the power MOS•FET for the low-side switch are mounted over the same die pad and electrically connected to each other through the die pad.

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patent: 2002-217416 (2002-08-01), None
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patent: WO 01/72092 (2001-09-01), None

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