Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2007-06-15
2011-11-29
Chu, Chris (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257SE25017, C257S774000, C257S758000, C438S108000, C438S109000, C361S760000
Reexamination Certificate
active
08067840
ABSTRACT:
The power amplifier module comprises a laminate substrate comprising thermal vias and terminals, as well as a platform device with an interconnection substrate of a semiconductor material. This substrate is provided with electrical interconnects at a first side, and having been mounted on the laminate substrate with an opposite second side. Electrically conducting connections extend from the first to the second side through the substrate. A power amplifier device is attached to the second side of the substrate. One of the electrically conducting connection through the interconnection substrate is a grounding path for the power amplifier, while a thermal path is provided by the semiconductor material. There is an optimum thickness for the interconnection substrate, at which both a proper grounding and a acceptable thermal dissipation is effected.
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Bielen Jeroen A.
Van Kleef Marcus H.
Van Straten Freerk E.
Chu Chris
NXP B.V.
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