Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2009-05-28

2011-11-08

Wagner, Jenny L (Department: 2891)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

C438S025000

Reexamination Certificate

active

08053253

ABSTRACT:
An object is to provide a highly reliable semiconductor device that has tolerance to external stress and electrostatic discharge. Another object is to prevent defective shapes and defective characteristics due to the external stress or an electrostatic discharge in the manufacturing process, and to manufacture a semiconductor device with high yield. Still another object is to manufacture a semiconductor device at low cost and with high productivity. With the use of a conductive shield covering a semiconductor integrated circuit, electrostatic breakdown due to electrostatic discharge of the semiconductor integrated circuit is prevented. The conductive shield is formed so that at least the conductive shields on the top and bottom surfaces are electrically connected by a plating method. In addition, a semiconductor device can be formed at low cost with high productivity because a plating method is used for the formation of the conductive shield.

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