Method of forming group-III nitride crystal, layered...

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Reexamination Certificate

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C428S699000

Reexamination Certificate

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08039130

ABSTRACT:
Heat treatment is conducted at a predetermined temperature of not less than 1250° C. on an underlying substrate obtained by epitaxially forming a first group-III nitride crystal on a predetermined base as an underlying layer. Three-dimensional fine irregularities resulting from crystalline islands are created on the surface of the underlying layer. A second group-III nitride crystal is epitaxially formed on the underlying substrate as a crystal layer. There are a great many fine voids interposed at the interface between the crystal layer and underlying substrate. The presence of such voids suppresses propagation of dislocations from the underlying substrate, which reduces the dislocation density in the crystal layer. As a result, the crystal layer of good crystal quality can be obtained.

REFERENCES:
patent: 6623877 (2003-09-01), Shibata et al.
patent: 6709703 (2004-03-01), Shibata et al.
patent: 6764871 (2004-07-01), Kawaguchi et al.
patent: 6924159 (2005-08-01), Usui et al.
patent: 6989202 (2006-01-01), Asai et al.
patent: 7190001 (2007-03-01), Taki
patent: 2002/0043208 (2002-04-01), Biwa et al.
patent: 2002/0197825 (2002-12-01), Usui et al.
patent: 2003/0085411 (2003-05-01), Shibata et al.
patent: 2003/0183157 (2003-10-01), Usui et al.
patent: 2004/0067648 (2004-04-01), Morita et al.
patent: 2005/0287774 (2005-12-01), Shibata et al.
patent: 2006/0046325 (2006-03-01), Usui et al.
patent: 09-064477 (1997-03-01), None
patent: 2002-222771 (2002-08-01), None
patent: 2003-178984 (2003-06-01), None
patent: 2004-119807 (2004-04-01), None
patent: 2005-093682 (2005-04-01), None

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