Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-12-23
2011-10-11
Pizarro Crespo, Marcos D (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S295000, C257S296000, C257S306000, C257SE21009
Reexamination Certificate
active
08035193
ABSTRACT:
A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A RuXTiYOZfilm is included in at least one of the bottom and top electrodes, where x, y and z are positive real numbers. A method of fabricating the capacitor through a sequential formation of a bottom electrode, a dielectric layer and a top electrode over a substrate includes forming a RuXTiYOZfilm during a formation of at least one of the bottom electrode and top electrode, where x, y and z are positive real numbers.
REFERENCES:
patent: 3773555 (1973-11-01), Cotton et al.
patent: 2003/0047771 (2003-03-01), Kweon et al.
patent: 2004/0110356 (2004-06-01), Yoon
patent: 2007/0099420 (2007-05-01), Dominguez et al.
patent: 2008/0158303 (2008-07-01), Kang et al.
patent: 1020020050415 (2002-06-01), None
patent: 1020060048987 (2006-05-01), None
patent: 1020070054022 (2007-05-01), None
patent: 1020070115146 (2007-12-01), None
Korean Office Action for Korean patent application No. 10-2008-0035965.
Korean Notice of Allowance for application No. 10-2008-0035965.
Do Kwan-Woo
Kil Deok-Sin
Kim Jin-Hyock
Kim Young-Dae
Lee Jeong-Yeop
Crespo Marcos D Pizarro
Hynix / Semiconductor Inc.
Lowe Hauptman & Ham & Berner, LLP
Tang Sue
LandOfFree
Method of fabricating capacitor in semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating capacitor in semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating capacitor in semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4286611