Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2009-12-01
2011-11-22
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S751000, C257S781000, C257SE23021
Reexamination Certificate
active
08063489
ABSTRACT:
In semiconductor integrated circuit devices for vehicle use or the like, in general, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding or the like using a gold wire and the like for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). The invention of the present application provides a semiconductor integrated circuit device (semiconductor device or electron circuit device) which includes a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board or the like (wiring substrate).
REFERENCES:
patent: 6534863 (2003-03-01), Walker et al.
patent: 2001/0008311 (2001-07-01), Harada et al.
patent: 2006/0214296 (2006-09-01), Okamoto et al.
patent: 2004-533711 (2004-11-01), None
Wikipedia—Solder May 17, 2011 http://en.wikipedia.org/wiki/Solder.
Shigihara Hiromi
Tsukamoto Hiroshi
Yajima Akira
Miles & Stockbridge P.C.
Pert Evan
Renesas Electronics Corporation
Wilson Scott R
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