Method for forming a capped micro-electro-mechanical system...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices

Reexamination Certificate

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C438S113000, C438S456000, C438S458000

Reexamination Certificate

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08039312

ABSTRACT:
A capped micro-electro-mechanical systems (MEMS) device is formed using a device wafer and a cap wafer. The MEMS device is located on a frontside of the device wafer. A frontside of a cap wafer is attached to the frontside of the device wafer. A first stressor layer having a tensile stress is applied to a backside of the cap wafer after attaching the frontside of the cap wafer to the frontside of the device wafer. The first stressor layer and the cap wafer are patterned to form an opening through the first stressor layer and the cap wafer after applying the first stressor layer. A conductive layer is applied to the backside of the cap wafer, including through the opening to the frontside of the device wafer.

REFERENCES:
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patent: 6902656 (2005-06-01), Ouellet et al.
patent: 7046411 (2006-05-01), Fleming
patent: 2003/0228089 (2003-12-01), Blackstone
patent: 2008/0148864 (2008-06-01), Fleury et al.
patent: 2009/0160040 (2009-06-01), Nabki et al.
patent: 2009/0256236 (2009-10-01), Smeys et al.
U.S. Appl. No. 12/638,424, filed Dec. 15, 2009.

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