Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Both semiconductors of the heterojunction are the same...
Reexamination Certificate
2007-11-13
2011-10-25
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Both semiconductors of the heterojunction are the same...
C257S184000, C257S185000, C257S459000, C257SE31020
Reexamination Certificate
active
08044435
ABSTRACT:
A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.
REFERENCES:
patent: 5802738 (1998-09-01), Ferniani
patent: 6107652 (2000-08-01), Scavennec et al.
patent: 6403990 (2002-06-01), Kaneko et al.
patent: 6821810 (2004-11-01), Hsiao et al.
patent: 2004/0119093 (2004-06-01), Cohen et al.
patent: 2004/0119129 (2004-06-01), Giboney
patent: 2007/0215900 (2007-09-01), Maimon
patent: 63056965 (1988-03-01), None
patent: 20050268271 (2007-03-01), None
Caine Ernie J.
Cockrum Charles A.
Jones Colin E.
Scott Jeffrey W.
Birch & Stewart Kolasch & Birch, LLP
Cruz Leslie Pilar
Lockheed Martin Corporation
Tran Minh-Loan T
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