Light emitting device

Details Light emitting device Light emitting device

2007-12-12

2011-10-04

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S013000, C257S014000, C257SE33008, C257SE29076, C977S762000

Reexamination Certificate

active

08030664

ABSTRACT:
There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

REFERENCES:
patent: 6770902 (2004-08-01), Phillips
patent: 6770903 (2004-08-01), Lin et al.
patent: 6773946 (2004-08-01), Moon et al.
patent: 6905977 (2005-06-01), Lin et al.
patent: 6907056 (2005-06-01), Botez
patent: 6967345 (2005-11-01), Gunapala et al.
patent: 7015497 (2006-03-01), Berger
patent: 7061014 (2006-06-01), Hosono et al.
patent: 7254150 (2007-08-01), Yoshida et al.
patent: 7306963 (2007-12-01), Linden
patent: 7595511 (2009-09-01), Kang
patent: 7820064 (2010-10-01), Jin
patent: 2002/0008232 (2002-01-01), Gunapala et al.
patent: 2003/0201434 (2003-10-01), Lin et al.
patent: 2004/0094756 (2004-05-01), Moon et al.
patent: 2004/0129932 (2004-07-01), Jang et al.
patent: 2004/0188694 (2004-09-01), Lin et al.
patent: 2004/0252737 (2004-12-01), Yi et al.
patent: 2005/0031000 (2005-02-01), Botez
patent: 2005/0117617 (2005-06-01), Yoshida et al.
patent: 2005/0161662 (2005-07-01), Majumdar et al.
patent: 2006/0033113 (2006-02-01), Lee et al.
patent: 2006/0097389 (2006-05-01), Islam et al.
patent: 2006/0098705 (2006-05-01), Wang et al.
patent: 2006/0115917 (2006-06-01), Linden
patent: 2006/0208273 (2006-09-01), Kang
patent: 2006/0223211 (2006-10-01), Mishra et al.
patent: 2006/0234407 (2006-10-01), Kim et al.
patent: 2007/0057144 (2007-03-01), Asano
patent: 2007/0235738 (2007-10-01), Jin et al.
patent: 2007/0248135 (2007-10-01), Mawst et al.
patent: 2008/0142782 (2008-06-01), Moon et al.
patent: 2008/0157057 (2008-07-01), Kim
patent: 2008/0191191 (2008-08-01), Kim
patent: 2010/0025673 (2010-02-01), Hu et al.
patent: 05-190903 (1993-07-01), None
patent: 10-2005-0098538 (2005-10-01), None
Liao et al., 2 um emission from Si/Ge heterojunction LED and up to 1.55 um detection by GOI detectors with strain-enhanced features, IEEE, 2005, 4 pages.
Liu et al., Temperature dependence of the electron-hole-plasma electroluminescence from metal-oxide-silicon tunneling diodes, Applied Physics Letters, vol. 77, No. 8, 2000, pp. 1111-1113.
Kulakci et al., Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2 layers by ion implantation, Semicond. Sci. Technol., 21, 2006, pp. 1527-1532.
Korean Office Action, with English Translation, issued in Korean patent Application No. KR 10-2006-0129003 dated on Apr. 21, 2008.
Korean Office Action, with English Translation, issued in Korean Patent Application No. KR 10-2006-0129004, mailed May 22, 2008.

Affiliated with

Also associated with

Rating

Light emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4282251