Method for manufacturing SOI substrate and SOI substrate

Details Method for manufacturing SOI substrate and SOI substrate Method for manufacturing SOI substrate and SOI substrate

2010-04-28

2011-10-25

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S459000, C257SE21415, C257SE21567

Reexamination Certificate

active

08043938

ABSTRACT:
A method is demonstrated to form an SOI substrate having a silicon layer with reduced surface roughness in a high yield. The method includes the step of bonding a base substrate such as a glass substrate and a bond substrate such as a single crystal semiconductor substrate to each other, where a region in which bonding of the base substrate with the bond substrate cannot be performed is provided at the interface therebetween. Specifically, the method is exemplified by the combination of: irradiating the bond substrate with accelerated ions; forming an insulating layer over the bond substrate; forming a region in which bonding cannot be performed in part of the surface of the bond substrate; bonding the bond substrate and the base substrate to each other with the insulating layer therebetween; and separating the bond substrate from the base substrate, leaving a semiconductor layer over the base substrate.

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