Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-09-18
2011-11-22
Such, Matthew W (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257SE31122, C257SE21499, C438S056000
Reexamination Certificate
active
08063462
ABSTRACT:
A semiconductor device includes a semiconductor substrate having a first surface in which a light-receiving portion and electrodes are provided. The semiconductor substrate has a penetrating wiring layer connecting the first surface and the second surface. A light-transmissive protective member is disposed on the semiconductor substrate so as to cover the first surface. A gap is provided between the semiconductor substrate and the light-transmissive protective member. A protective film is formed at a surface of the light-transmissive protective member. The protective film has an opening provided at a region corresponding to the light-receiving portion.
REFERENCES:
patent: 5115295 (1992-05-01), Hisa
patent: 6599770 (2003-07-01), Miyamoto
patent: 7042623 (2006-05-01), Huibers et al.
patent: 7180149 (2007-02-01), Yamamoto et al.
patent: 7271460 (2007-09-01), Nagasaka et al.
patent: 7696593 (2010-04-01), Yoneda et al.
patent: 7728398 (2010-06-01), Nakajo et al.
patent: 7852392 (2010-12-01), Mochizuki
patent: 2002/0019069 (2002-02-01), Wada
patent: 2003/0160185 (2003-08-01), Homme
patent: 2006/0076636 (2006-04-01), Fukunaga
patent: 2006/0138480 (2006-06-01), Adkisson et al.
patent: 2007/0126912 (2007-06-01), De Bruin et al.
patent: 2007/0235882 (2007-10-01), Sekiguchi et al.
patent: 2007/0285784 (2007-12-01), Yamada et al.
patent: 2008/0073740 (2008-03-01), Shibayama
patent: 2009/0140363 (2009-06-01), Prima et al.
patent: 2009/0189233 (2009-07-01), Liu et al.
patent: 1662564 (2004-08-01), None
patent: 08-088339 (1996-04-01), None
patent: 2005/022631 (2005-03-01), None
Harada Susumu
Sekiguchi Masahiro
Tanida Kazumasa
Kabushiki Kaisha Toshiba
Naraghi Ali
Such Matthew W
Turocy & Watson LLP
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