Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257SE31122, C257SE21499, C438S056000

Reexamination Certificate

active

08063462

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a first surface in which a light-receiving portion and electrodes are provided. The semiconductor substrate has a penetrating wiring layer connecting the first surface and the second surface. A light-transmissive protective member is disposed on the semiconductor substrate so as to cover the first surface. A gap is provided between the semiconductor substrate and the light-transmissive protective member. A protective film is formed at a surface of the light-transmissive protective member. The protective film has an opening provided at a region corresponding to the light-receiving portion.

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