Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

Filed on

2009-09-10

Date issued

2011-11-29

Examiner

Thai, Luan C (Department: 2891)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Integrated circuit structure with electrically isolated...

SubSubClass

Passive components in ics

Other Related Categories

C257S295000, C257SE21008, C257SE29343

Type

Reexamination Certificate

Status

active

Patent number

08067817

Description

ABSTRACT:
A semiconductor device includes a ferroelectric capacitor formed over a semiconductor substrate, wherein the ferroelectric capacitor including a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film, and the upper electrode including a first conductive film formed of a first conductive noble metal oxide, and a second conductive film formed of a metal nitride compound formed on the first conductive film.

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International Search Report of PCT/JP2007/055053, date of mailing Aug. 28, 2007.
Chinese Office Action dated Apr. 29, 2011 from the Chinese State Intellectual Property Office in a counterpart Chinese Patent Application No. 200780052165.1.

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