Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-10-28

2011-11-08

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE21002

Reexamination Certificate

active

08053268

ABSTRACT:
A semiconductor device has a semiconductor substrate including a light receiving element, a silicon oxide film formed on the semiconductor substrate, a plurality of wiring interlayer films formed on the silicon oxide film, and each including a wiring layer formed as the result of the fact that copper is buried, and a silicon nitride film formed on the wiring interlayer film of the uppermost layer wherein Si—H concentration is smaller than N—H concentration.

REFERENCES:
patent: 4962065 (1990-10-01), Brown et al.
patent: 7342268 (2008-03-01), Adkisson et al.
patent: 2004/0251395 (2004-12-01), Takahashi et al.
patent: 2006/0220025 (2006-10-01), Oh
patent: 2007/0077777 (2007-04-01), Gumpher
patent: 2007/0145419 (2007-06-01), Park
patent: 2007/0194396 (2007-08-01), Nomura
patent: 2008/0036023 (2008-02-01), Park
patent: 1992212 (2007-07-01), None
patent: 101026173 (2007-08-01), None
patent: 1814155 (2007-08-01), None
patent: 5-29598 (1993-02-01), None
patent: 2001-136341 (2001-05-01), None
patent: 2005-311015 (2005-11-01), None
patent: 2006-179903 (2006-07-01), None
patent: 2006-229206 (2006-08-01), None
patent: 2006-269963 (2006-10-01), None
Notification of the Second Office Action issued by the State Intellectual Property Ofice of the People's Republic of China on Aug. 4, 2010, for Chinese Patent Application No. 200810173822.4, and English-language translation thereof.
Ay et al., “Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides,” Optical Materials (2004), 26:7-20.
Notification of the First Office Action issued by the Chinese Patent Office on Jan. 8, 2010, for Chinese Patent Application No. 200810173822.4, and English-language translation thereof.
Martinez et al., “Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method,” Elsevier (2004), pp. 203-207.
English-language translation of Notification of the Third Office Action issued by the State Intellectual Property Ofice of the People's Republic of China on Nov. 11, 2010, for Chinese Patent Application No. 200810173822.4.
Notification of Reasons for Rejection issued by the Japanese Patent Office on Feb. 22, 2011, for Japanese Patent Application No. 2007-280304, and English-language translation thereof.

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