Method for fabricating at least one transistor

Details Method for fabricating at least one transistor Method for fabricating at least one transistor

2006-09-01

2011-11-29

Le, Dung A (Department: 2818)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

C438S121000, C438S508000

Reexamination Certificate

active

08067269

ABSTRACT:
A method for fabricating transistors such as high electron mobility transistors, each transistor comprising a plurality of epitaxial layers on a common substrate, method comprising: (a) forming a plurality of source contacts on a first surface of the plurality of epitaxial layers; (b) forming at least one drain contact on the first surface; (c) forming at least one gate contact on the first surface; (d) forming at least one insulating layer over and between the gate contacts, source contacts and the drain contacts; (e) forming a conductive layer over at least a part of the at least one insulating layer for connecting the source contacts; and (f) forming at least one heat sink layer over the conductive layer.

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