Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2008-12-11

2011-10-25

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S751000, C257S752000, C257SE21575, C257SE23173, C257S332000, C438S627000, C438S586000, C438S618000, C438S653000

Reexamination Certificate

active

08044519

ABSTRACT:
A method of fabricating a semiconductor device includes forming an insulating film above a semiconductor substrate, forming a concave portion in the insulating film, forming a precursor film including a predetermined metallic element on a surface of the insulating film, carrying out a heat treatment on the precursor film and the insulating film to react with each other, thereby forming an insulative barrier film mainly comprising a compound of the predetermined metallic element and a constituent element of the insulating film in a self-aligned manner at a boundary surface between the precursor film and the insulating film, removing an unreacted part of the precursor film after forming the barrier film, forming a conductive film comprising at least one of Ru and Co on the barrier film, depositing a wiring material film on the conductive film, and forming a wiring from the wiring material film to provide a wiring structure.

REFERENCES:
patent: 7297999 (2007-11-01), Wang
patent: 7304384 (2007-12-01), Koike et al.
patent: 2002/0048942 (2002-04-01), Yamaguchi
patent: 2002/0123215 (2002-09-01), Harada
patent: 2007/0059919 (2007-03-01), Ooka
patent: 2008/0057704 (2008-03-01), Koike et al.
patent: 2008/0286960 (2008-11-01), Shimizu et al.
patent: 2009/0155997 (2009-06-01), Shinriki et al.
patent: 2005-277390 (2005-10-01), None
T. Watanabe, et al., “Self-Formed Barrier Technology Using CuMn Alloy Seed for copper Dual-Damascene Interconnect with porous-SiOC/ porous-PAr Hybrid Dielectric”, IEEE IITC Proceeding, Jun. 2007, pp. 7-9.

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