Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2007-08-30

2011-10-25

Graybill, David (Department: 2894)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S444000, C438S700000, C438S702000, C438S701000, C148SDIG050, C257SE21546, C257SE21549

Reexamination Certificate

active

08043932

ABSTRACT:
A method of fabricating a semiconductor device including at least one of the following steps: forming an oxide layer on and/or over a silicon substrate. Forming a first photoresist pattern on and/or over the oxide layer. Forming a trench by etching the oxide layer and the substrate using the first photoresist pattern as a mask. Removing the first photoresist pattern. Filling the trench with a trench oxide layer. Planarizing the trench oxide layer. Forming an etch stop layer on and/or over the trench oxide layer. Forming a second photoresist pattern on and/or over the etch stop layer. Etching the etch stop layer and the trench oxide layer using the second photoresist pattern as an etch mask. Removing the second photoresist pattern and the etch stop layer.

REFERENCES:
patent: 6066544 (2000-05-01), Pan et al.
patent: 2006/0240673 (2006-10-01), Lee
patent: 2008/0057721 (2008-03-01), Lim
patent: 2008/0315352 (2008-12-01), Lim
patent: 1019980030769 (1998-07-01), None
patent: 1020030050197 (2003-06-01), None

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