Ultra-thin ohmic contacts for p-type nitride light emitting...

Details Ultra-thin ohmic contacts for p-type nitride light emitting... Ultra-thin ohmic contacts for p-type nitride light emitting...

2005-07-27

2011-10-25

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S744000, C257S745000

Reexamination Certificate

active

08044425

ABSTRACT:
A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3ohm-cm2.

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