Nitride semiconductor light emitting device and fabrication...

Details Nitride semiconductor light emitting device and fabrication... Nitride semiconductor light emitting device and fabrication...

2005-12-05

2011-10-25

Hoang, Quoc (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257SE29069, C257S014000

Reexamination Certificate

active

08044380

ABSTRACT:
Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a “C (carbon)”-doped second nitride semiconductor layer formed above the active layer. According to the present invention, the crystallinity of the active layer is enhanced, and the optical power and the operation reliability are enhanced.

REFERENCES:
patent: 2002/0158259 (2002-10-01), Ono et al.
patent: 2005/0250233 (2005-11-01), Lee
patent: 2006/0175621 (2006-08-01), Ohtsuka et al.
patent: 1 221 723 (2002-07-01), None
patent: 2-203520 (1990-08-01), None
patent: 5-074705 (1993-03-01), None
patent: 5-347255 (1993-12-01), None
patent: 09-06396 (1997-03-01), None
patent: 10-112438 (1998-04-01), None
patent: 10-112438 (1998-10-01), None
patent: 10-2003-0092957 (2003-12-01), None
patent: 10-2005-0061681 (2005-06-01), None
patent: WO 03/083950 (2003-10-01), None
patent: WO 2004/017431 (2004-02-01), None
English's translation of JP10-112438.
Office Action dated Jun. 6, 2008 in Chinese Application No. 200580041801.1, filed Dec. 5, 2005.
Office Action dated Jun. 28, 2011 in Japanese Application No. 2007-548059, filed Dec. 5, 2005.

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