Memory device and manufacturing method the same

Details Memory device and manufacturing method the same Memory device and manufacturing method the same

2006-03-27

2011-10-04

Bryant, Kiesha (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S292000, C257S296000, C257SE29170, C257SE51001, C257SE51005, C257SE51018, C257SE51024, C365S072000

Reexamination Certificate

active

08030643

ABSTRACT:
A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

REFERENCES:
patent: 5313101 (1994-05-01), Harada et al.
patent: 5341026 (1994-08-01), Harada et al.
patent: 5650834 (1997-07-01), Nakagawa et al.
patent: 5930667 (1999-07-01), Oda
patent: 5952789 (1999-09-01), Stewart et al.
patent: 6243069 (2001-06-01), Ogawa et al.
patent: 6507010 (2003-01-01), Yamazaki et al.
patent: 2001/0043168 (2001-11-01), Koyama et al.
patent: 2003/0118927 (2003-06-01), Nakamura et al.
patent: 2003/0134146 (2003-07-01), Aziz et al.
patent: 2003/0183699 (2003-10-01), Masui
patent: 2006/0175648 (2006-08-01), Asami
patent: 2006/0186804 (2006-08-01), Sakakura et al.
patent: 2007/0153565 (2007-07-01), Nomura et al.
patent: 2007/0200125 (2007-08-01), Ikeda et al.
patent: 2007/0230235 (2007-10-01), Abe et al.
patent: 2001-345431 (2001-12-01), None
patent: 2004-128471 (2004-04-01), None
patent: WO 02/37500 (2002-05-01), None
patent: WO 2004/015778 (2004-02-01), None
patent: WO 2006/043573 (2006-04-01), None

Affiliated with

Also associated with

Rating

Memory device and manufacturing method the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device and manufacturing method the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device and manufacturing method the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4273856