Nitride semiconductor light emitting device and fabrication...

Details Nitride semiconductor light emitting device and fabrication... Nitride semiconductor light emitting device and fabrication...

2005-12-05

2011-10-04

Nguyen, Ha Tran T (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257S097000, C257SE21002, C257SE29068, C257SE33013, C438S037000

Reexamination Certificate

active

08030639

ABSTRACT:
Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.

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Office Action dated Jun. 28, 2011 in Japanese Application No. 2007-548055, filed Jun. 22, 2007.

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