Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2009-08-11
2011-11-08
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S190000, C257S616000, C257S617000, C257SE29104, C257SE29085
Reexamination Certificate
active
08053759
ABSTRACT:
A substrate material including a Si-containing substrate and an insulating region that is resistant to Ge diffusion present atop the Si-containing substrate. The substrate material further includes a substantially relaxed SiGe alloy layer present atop the insulating region, wherein the substantially relaxed SiGe alloy layer has a planar defect density from about 5000 defects/cm−2or less. The substrate material may be employed in a heterostructure, in which a strained Si layer is present atop the substantially relaxed SiGe alloy layer of the substrate material.
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patent: 2005/0054175 (2005-03-01), Bauer
patent: 2005/0151134 (2005-07-01), Hsu et al.
J. Cai, et al., “Strain relaxation and threading dislocation density in helium-implanted and annealed Si1-xlSi(100) heterostructures” Journal of Applied Physics, vol. 95, No. 10, May 15, 2004, pp. 5347-5351.
J. Cai et al., “Influence of He implantation conditions on strain relaxation and threading dislocation density in Si0.2virtual substrates”, Mat. Res. Soc. Symp. Proc. vol. 809 (2004).
Bedell Stephen W.
Chen Huajie
Fogel Keith E.
Sadana Devendra K.
Shahidi Ghavam G.
International Business Machines - Corporation
Percello, Esq. Louis J.
Scully Scott Murphy & Presser, PC
Tran Minh-Loan T
LandOfFree
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