Program method of nonvolatile memory device

Details Program method of nonvolatile memory device Program method of nonvolatile memory device

2008-12-31

2011-10-25

Nguyen, Tuan (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C375S140000, C375S140000, C711S103000

Reexamination Certificate

active

08045393

ABSTRACT:
According to an aspect of a program method of a nonvolatile memory device, a first program operation for programming a first data stored in a first latch may be performed and a cache program signal may be input for inputting a second data to be programmed subsequently. When the cache program signal is input, a determination is made as to whether a first program verify operation is being performed, and if so, the verify operation is stopped, the second data is input, and the first program verify operation is restarted.

REFERENCES:
patent: 6081870 (2000-06-01), Roohparvar
patent: 6834323 (2004-12-01), Dover et al.
patent: 7061802 (2006-06-01), Nakai
patent: 7143229 (2006-11-01), Kamimura
patent: 1020050079534 (2005-08-01), None
patent: 1020050112991 (2005-12-01), None
patent: 1020070000009 (2007-01-01), None
Notice of Allowance Issued from Korean Intellectual Property Office on Jan. 28, 2010.

Affiliated with

Also associated with

Rating

Program method of nonvolatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Program method of nonvolatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Program method of nonvolatile memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4272331