Nitride semiconductor light emitting element

Details Nitride semiconductor light emitting element Nitride semiconductor light emitting element

2006-05-26

2011-11-08

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257S094000, C257S096000, C257S103000, C257SE33008, C257SE33013

Reexamination Certificate

active

08053756

ABSTRACT:
Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer2, an undoped GaN layer3, an n-type GaN contact layer4, an InGaN/GaN superlattice layer5, an active layer6, a first undoped InGaN layer7, a second undoped InGaN layer8, and a p-type Gan-based contact layer9are stacked on a sapphire substrate1. A p-electrode10is formed on the p-type Gan-based contact layer9. An n-electrode11is formed on a surface where the n-type GaN contact layer4is exposed as a result of mesa-etching. The first undoped InGaN layer7is formed to contact a well layer closest to a p-side in the active layer having a quantum well structure, and subsequently the second undoped InGaN layer8is formed thereon. The carrier injection efficiency into the active layer6can be improved by making the total film thickness of the first and second undoped InGaN layers 20 nm or less.

REFERENCES:
patent: 6060335 (2000-05-01), Rennie et al.
patent: 6242761 (2001-06-01), Fujimoto et al.
patent: 6309459 (2001-10-01), Yuge et al.
patent: 7339195 (2008-03-01), Goto et al.
patent: 2002/0056836 (2002-05-01), Sawazaki et al.
patent: 2004/0056259 (2004-03-01), Goto et al.
patent: 11-54794 (1989-06-01), None
patent: 2778405 (1998-07-01), None
patent: 10-290027 (1998-10-01), None
patent: 11-307866 (1999-11-01), None
patent: 2000-286448 (2000-10-01), None
patent: 2001-077413 (2001-03-01), None
patent: 2002-261395 (2002-09-01), None
patent: 2003-124573 (2003-04-01), None
patent: 2004-128521 (2004-04-01), None
patent: 2005-268459 (2005-09-01), None
patent: 2006-135221 (2006-05-01), None

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