Photoelectric conversion system

Details Photoelectric conversion system Photoelectric conversion system

1995-05-22

1996-12-10

Razavi, Michael T.

Television

Camera, system and detail

Solid-state image sensor

348302, 348304, 348307, 348309, 2502081, H04N 314, H04N 5335

Patent

active

055835708

ABSTRACT:
A photosensor formed on an insulating substrate has a transparent top gate electrode arranged on the upper side of a semiconductor layer for photoelectric conversion and a bottom gate electrode arranged on the lower side of the semiconductor layer. If light is applied from the top gate electrode side in a state in which a bottom gate voltage V.sub.BG =+20 V is applied to the bottom gate electrode and a top gate voltage V.sub.TG =-20 V is applied to the top gate electrode, electron-hole pairs are generated in the semiconductor layer and only the holes are held in the semiconductor layer by the effect of the top gate voltage V.sub.TG =-20 V. Therefore, an n-channel is formed in the semiconductor layer and a drain current I.sub.DS flows. It was confirmed that the drain current I.sub.DS will not flow even if illumination light is applied when the bottom gate voltage V.sub.BG is set at 0 V. Therefore, the selection or non-selection state of the photosensor can be controlled by the bottom gate voltage V.sub.TG.

REFERENCES:
patent: Re34309 (1993-07-01), Tanaka et al.
patent: 4556908 (1985-12-01), Ida
patent: 5051831 (1991-09-01), Hashimoto
patent: 5463420 (1995-10-01), Yamada

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