Low voltage electron source with self aligned gate...

Details Low voltage electron source with self aligned gate... Low voltage electron source with self aligned gate...

2007-10-29

2011-10-18

Lin, James (Department: 1715)

Coating processes

Electrical product produced

Electron emissive or suppressive

C427S271000, C427S282000, C427S558000, C216S048000

Reexamination Certificate

active

08039042

ABSTRACT:
A method of fabricating an electron source having a self-aligned gate aperture is disclosed. A substrate is deposited on a first conductive layer. Over the first conductive layer an emitter layer is deposited. The emitter layer includes one or a plurality of spaced-apart nano-structures and a solid surface with nano-structures protruding above the surface. An insulator is conformally deposited over the emitter layer surface and forms a post from each protruding nano-structure. A second conductive layer is deposited over the insulator and the second conductive layer and the insulator are removed from the nano-structures such that apertures are formed in the second conductive layer and at least the ends of the nano-structures are exposed at the centers of said apertures.

REFERENCES:
patent: 5973444 (1999-10-01), Xu et al.
patent: 6062931 (2000-05-01), Chuang et al.
patent: 6283812 (2001-09-01), Jin et al.
patent: 6628053 (2003-09-01), Den et al.
patent: 6650061 (2003-11-01), Urayama et al.
patent: 6741019 (2004-05-01), Filas et al.
patent: 6831017 (2004-12-01), Li et al.
patent: 2002/0175323 (2002-11-01), Guillom et al.
patent: 2003/0207505 (2003-11-01), Theiss et al.
patent: 2004/0005723 (2004-01-01), Empedocles et al.

Affiliated with

Also associated with

Rating

Low voltage electron source with self aligned gate... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low voltage electron source with self aligned gate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low voltage electron source with self aligned gate... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4271346