Method for manufacturing liquid crystal display device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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Details

C438S027000, C438S042000, C257SE21533, C257SE21535

Reexamination Certificate

active

08030104

ABSTRACT:
A method for manufacturing a liquid crystal display device is disclosed. The method includes forming a gate electrode, a gate pad, a gate line on a substrate by using a first mask; forming a gate insulating film, an active layer, an ohmic contact layer and a conductive layer in sequence above the substrate including the gate electrode, the gate line and the gate pad; forming an active pattern, an ohmic contact pattern, source/drain electrodes, a data line and a data pad by using a second mask; forming a pixel electrode on the gate insulating film in a pixel region by using a third mask, to contact with the drain electrode; exposing the active pattern by etching the ohmic contact pattern using the source/drain electrodes as an etching mask; forming a passivation film above the substrate including the source/drain electrodes, the data line and the data pad; forming a first contact hole for exposing the gate pad and a second contact hole for exposing the data pad by etching the passivation and/or gate insulating films using a fourth mask; and forming a common electrode having a plurality of holes on the substrate by using a fifth mask.

REFERENCES:
patent: 2003/0123009 (2003-07-01), Jo et al.
patent: 2004/0125327 (2004-07-01), Choi et al.

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