Integrated radio frequency circuits

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S531000, C257S536000

Reexamination Certificate

active

08039925

ABSTRACT:
A plurality of devices, such as devices that are utilized for implementing radio frequency applications, can be formed in the same substrate. Each of these devices may be formed over a triple well that includes at least one well capable of being biased. Each of the wells is coupled to a well bias through a resistor. In some embodiments, a plurality of wells operating at a relatively high frequency may be connected to the same bias potential, each through separate resistors. The noise coupling may be reduced through the use of the bias resistors.

REFERENCES:
patent: 5457652 (1995-10-01), Brahmbhatt
patent: 6055655 (2000-04-01), Momohara
patent: 6157073 (2000-12-01), Lehongres

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated radio frequency circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated radio frequency circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated radio frequency circuits will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4268430

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.