Semiconductor light-emitting devices

Details Semiconductor light-emitting devices Semiconductor light-emitting devices

1990-04-10

1991-04-16

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

050088912

ABSTRACT:
Configurations of heterostructure semiconductor lasers and LEDs are desribed which enable emission wavelengths in the blue to ultra-violet region to be achieved. The structures are based on an n-type layer formed of a (ZnCd) (SSe) II-VI semiconductor and a p-type layer formed of Cu(AlGa) (SSe).sub.2 or (ZnCd)Ga.sub.2 (SSe).sub.4 semiconductor, epitaxially formed successively on a substrate, with each layer having an identical value of lattice constant to that of the substrate.

REFERENCES:
patent: 4868615 (1989-09-01), Kamata
Sigurd Wagner, "Preparation and Properties of Green-Light-Emitting CdS-CuGaS.sub.2 Heterodiodes", Journal of Applied Physics, vol. 45, No. 1, Jan. 1984, pp. 246-251.

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