Phase-change memory device

Details Phase-change memory device Phase-change memory device

2008-12-12

2011-11-01

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257SE45002

Reexamination Certificate

active

08049196

ABSTRACT:
A phase-change memory device includes a lower electrode; and at least two phase-change memory cells sharing the lower electrode. Another phase-change memory device includes a heating layer having a smaller contact area with a phase-change material layer and a greater contact area with a PN diode structure.

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English Translation of Korean Notice of Allowance for application No. 10-2008-0031473.
English Translation of Korean Office Action for Korean Patent Application No. 10-2008-0031473.

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