Semiconductor device, method for manufacturing the same,...

Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide

Reexamination Certificate

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C438S445000, C257S349000, C257S191000, C257S435000

Reexamination Certificate

active

08039835

ABSTRACT:
A semiconductor device includes a substrate, a transparent oxide layer disposed on one surface side of the substrate, a gate disposed apart from the transparent oxide layer, and a gate insulating layer disposed between the transparent oxide layer and the gate. The transparent oxide layer includes a source, a drain, and a channel formed integrally between the source and the drain, and is made of a transparent oxide material as the main material. The gate provides an electric field to the channel. The gate insulating layer insulates the source and the drain from the gate. The average thickness of the channel is smaller than the average thickness of the source and the drain so that the source and the drain function as conductors and the channel functions as a semiconductor.

REFERENCES:
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patent: 5599728 (1997-02-01), Hu et al.
patent: 7339187 (2008-03-01), Wager et al.
patent: 2007/0215957 (2007-09-01), Chen et al.
patent: 2000058837 (2000-02-01), None
patent: A-2000-58837 (2000-02-01), None
patent: A-2000-277537 (2000-10-01), None
B. Yaglioglu et al., “High-mobility amorphous In2O3-10wt %ZnO thin film transistors”, Applied Physics Letters 89, 062103-1, Aug. 7, 2006, American Institute of Physics.

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