GaN-based high electron mobility transistor (HEMT) with an...

Details GaN-based high electron mobility transistor (HEMT) with an... GaN-based high electron mobility transistor (HEMT) with an...

2006-03-30

2011-10-25

Gurley, Lynne (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S282000, C257S283000, C257SE21621, C257SE21624, C257SE29246

Reexamination Certificate

active

08044433

ABSTRACT:
A semiconductor device includes a substrate, a GaN-based semiconductor layer formed on the substrate, a gate electrode embedded in the GaN-based semiconductor layer, a source electrode and a drain electrode formed on both sides of the gate electrode, a first recess portion formed between the gate electrode and the source electrode, and a second recess portion formed between the gate electrode and the drain electrode. The first recess portion has a depth deeper than that of the second recess portion.

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patent: 2002-016245 (2002-01-01), None

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