Resistive memory

Details Resistive memory Resistive memory

2010-10-14

2011-12-27

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257SE45001, C365S148000

Reexamination Certificate

active

08084762

ABSTRACT:
A memory device includes an array of memory structures disposed in rows and columns and constructed over a substrate, each memory structure comprising a first signal electrode, a second signal electrode, and a resistive layer coupled to the first signal electrode and the second signal electrode; a plurality of word lines connected to the first signal electrodes of a row of memory cells; and a plurality of bit lines connected to the second signal electrodes of a column of memory cells.

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patent: 6664594 (2003-12-01), Klodzinski
patent: 6917084 (2005-07-01), Baum et al.
patent: 6992390 (2006-01-01), Edelstein et al.
patent: 7145824 (2006-12-01), Bill et al.
patent: 2009/0201716 (2009-08-01), Ufert

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