Method for manufacturing an ultra narrow gap...

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

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C029S603070, C029S603130, C029S603140, C360S324100, C360S324110, C438S003000

Reexamination Certificate

active

08037593

ABSTRACT:
A method for manufacturing a magnetoresistive sensor that decreases the stack height of the sensor. The method includes forming a sensor structure having at its top, a Ru layer and a Ta layer over the Ru layer. An annealing process is performed to set the magnetization of the pinned layer of the sensor structure. After the annealing process has been completed and the Ta layer is no longer needed, an ion milling process is performed to remove the Ta layer.

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Yen et al., “Improvement of Switching Field in Magnetic Tunneling Junction Using Ru/Ta Capping Layer” IEEE Transactions on Magnetics, vol. 42, No. 10, Oct. 2006.
Tezuka et al., “CPP-GMR Enhancement in Spin Valves Using a Thin Ru Layer” Journal of Magnetism and Magnetic Materials 290-291 (2005) 1150-1153.

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