Multiple level programming in a non-volatile memory device

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Other Related Categories

C365S185180, C365S185170, C365S185230, C365S185280

Type

Reexamination Certificate

Status

active

Patent number

08045392

Description

ABSTRACT:
The programming method of the present invention minimizes program disturb by initially programming cells on the same word line with the logical state having the highest threshold voltage. The remaining cells on the word line are programmed to their respective logical states in order of decreasing threshold voltage levels.

REFERENCES:
patent: 6058042 (2000-05-01), Nobukata
patent: 6147910 (2000-11-01), Hsu
patent: 6181604 (2001-01-01), Lu
patent: 6538923 (2003-03-01), Parker
patent: 6771537 (2004-08-01), Jyouno et al.
patent: 6845060 (2005-01-01), Lee
patent: 7110300 (2006-09-01), Visconti
patent: 7450433 (2008-11-01), Wan et al.
patent: 2005/0248992 (2005-11-01), Hwang

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Multiple level programming in a non-volatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multiple level programming in a non-volatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple level programming in a non-volatile memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4261596

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.