Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2009-01-23
2011-12-20
Lee, Hsien Ming (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S700000, C438S736000, C510S181000, C510S255000, C257SE21219, C257SE21245
Reexamination Certificate
active
08080475
ABSTRACT:
Embodiments of the present invention describe a removal chemistry for removing hard mask. The removal chemistry is a wet-etch solution that removes a metal hard mask formed on a dielectric layer, and is highly selective to a metal conductor layer underneath the dielectric layer. The removal chemistry comprises an aqueous solution of hydrogen peroxide (H2O2), a hydroxide source, and a corrosion inhibitor. The hydrogen peroxide and hydroxide source have the capability to remove the hard mask while the corrosion inhibitor prevents the metal conductor layer from chemically reacting with the hydrogen peroxide and hydroxide source during the hard mask removal.
REFERENCES:
patent: 2002/0031985 (2002-03-01), Wang et al.
patent: 2006/0135045 (2006-06-01), Bian et al.
patent: 2006/0169597 (2006-08-01), Liu et al.
RamachandraRao Vijayakumar SubramanyaRao
Singh Kanwal Jit
Intel Corporation
Lee Hsien Ming
Winkle, PLLC
LandOfFree
Removal chemistry for selectively etching metal hard mask does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Removal chemistry for selectively etching metal hard mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Removal chemistry for selectively etching metal hard mask will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4260985