Memory circuit with quantum well-type carrier storage

Details Memory circuit with quantum well-type carrier storage Memory circuit with quantum well-type carrier storage

2009-11-12

2011-11-22

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Read only systems

Semiconductive

C365S103000, C365S114000, C365S072000, C365S027000

Reexamination Certificate

active

08064239

ABSTRACT:
Data is stored in a quantum-well type structure with double gate control. According to an example embodiment, a transistor-based data storage circuit includes a gate, a back gate and a semiconductor channel between the gate and the back gate. Carriers are stored in a storage pocket structure in the channel, in response to biases applied to the gate and back gate. Current passing through the channel is sensed and used to detect the stored carriers and, correspondingly, a memory state of the storage circuit.

REFERENCES:
patent: 7047391 (2006-05-01), Dally et al.
patent: 7216214 (2007-05-01), Dally et al.
patent: 2008/0316828 (2008-12-01), Hanafi et al.
Erotsun, M. Gunhan;, Kapur, Pawan; Saraswat, Krishna C., “A Highly Scalable Capacitorless Double Gate Quantum Well Single Transistor DRAM: 1T-QW DRAM,” IEEE Device Letters, 2008.

Affiliated with

Also associated with

Rating

Memory circuit with quantum well-type carrier storage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory circuit with quantum well-type carrier storage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory circuit with quantum well-type carrier storage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4260881