Process for forming contact openings through oxide layers

Details Process for forming contact openings through oxide layers Process for forming contact openings through oxide layers

1981-03-26

1983-02-08

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29578, H01L 21265, H01L 2131

Patent

active

043720340

ABSTRACT:
A process is described for forming an opening for a contact member through a deposited oxide layer and thermally grown oxide layer. Where the deposited oxide layer is rich in phosphorus, a wet etchant is used to etch through the deposited oxide layer. This results in a tapered opening through the deposited oxide layer. Then a plasma etchant is used to form an opening through the thermally grown oxide in alignment with an opening through a photoresist layer.

REFERENCES:
patent: 3497407 (1970-02-01), Esch et al.
patent: 3635774 (1972-01-01), Ohta
patent: 4147564 (1979-04-01), Magee et al.
patent: 4309812 (1982-01-01), Horng et al.

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