Method for inspecting overlay shift defect during...

Details Method for inspecting overlay shift defect during... Method for inspecting overlay shift defect during...

2009-04-30

2011-11-01

Evans, F. L. (Department: 2877)

Image analysis

Applications

Manufacturing or product inspection

C250S306000, C250S307000

Reexamination Certificate

active

08050490

ABSTRACT:
A method of inspecting for overlay shift defects during semiconductor manufacturing is disclosed. The method can include the steps of providing a charged particle microscopic image of a sample, identifying an inspection pattern period in the charged particle microscopic image, averaging the charged particle microscopic image by using the inspection pattern period to form an averaged inspection pattern period, estimating an average width from the averaged inspection pattern period, and comparing the average width with a predefined threshold value to determine the presence of an overlay shift defect.

REFERENCES:
patent: 7095885 (2006-08-01), DeLaRosa et al.
patent: 2005/0089773 (2005-04-01), Shur et al.

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