Methods for processing silicon on insulator wafers

Details Methods for processing silicon on insulator wafers Methods for processing silicon on insulator wafers

2010-12-17

2011-12-20

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S406000, C438S458000, C438S697000

Reexamination Certificate

active

08080464

ABSTRACT:
Methods are provided for etching and/or depositing an epitaxial layer on a silicon-on-insulator structure comprising a handle wafer, a silicon layer, and a dielectric layer between the handle wafer and the silicon layer. The silicon layer has a cleaved surface defining an outer surface of the structure. The cleaved surface of wafer is then etched while controlling a temperature of the reactor such that the etching reaction is kinetically limited. An epitaxial layer is then deposited on the wafer while controlling the temperature of the reactor such that a rate of deposition on the cleaved surface is kinetically limited.

REFERENCES:
patent: 6287941 (2001-09-01), Kang et al.
patent: 6562720 (2003-05-01), Thilderkvist et al.
patent: 2002/0090818 (2002-07-01), Thilderkvist et al.
patent: 2004/0053515 (2004-03-01), Comita et al.
patent: 2007/0066036 (2007-03-01), Schauer et al.
patent: 2007/0249139 (2007-10-01), Gadkaree et al.
patent: 2007/0259526 (2007-11-01), Kang et al.
patent: 2009/0032873 (2009-02-01), Cites et al.
patent: 1855309 (2007-11-01), None
patent: 0063954 (2000-10-01), None
Habuka, Hitoshi et al., Dominant rate process of silicon surface etching by hydrogen chloride gas, Science Direct, Oct. 1, 2005, pp. 104-110, Elsevier.
Habuka, Hitoshi et al., Nonlinear increase in silicon epitaxial growth rate in a SiHCl3-H2 system under atmospheric pressure, Journal of Crystal Growth, Dec. 1, 1997, pp. 359-362, vol. 182, No. 3-4, Elsevier, Amsterdam, NL.
Habuka, Hitoshi et al., Change in Microroughness of a Silicon Surface during In Situ Cleaning Using HF and HCl Gases, Journal of the Electrochemical Society, Dec. 1, 1998, vol. 145, No. 12, pp. 4264-4271, Electrochemical Society, Manchester, NH.
PCT International Search Report and Written Opinion of the International Searching Authority mailed on Mar. 9, 2011 regarding PCT/US2010/062094 filed on Dec. 23, 2010.

Affiliated with

Also associated with

Rating

Methods for processing silicon on insulator wafers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for processing silicon on insulator wafers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for processing silicon on insulator wafers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4254534