Semiconductor device including capacitor element provided...

Details Semiconductor device including capacitor element provided... Semiconductor device including capacitor element provided...

2008-07-08

2011-10-18

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S760000, C257SE23144

Reexamination Certificate

active

08039924

ABSTRACT:
A semiconductor device includes a first wiring layer which is provided above a semiconductor substrate and includes a first insulating film and a wiring buried in the first insulating film, a second insulating film provided above the first wiring layer, a third insulating film provided on the second insulating film, and a capacitor element provided on the third insulating film. The wiring includes an upper surface having a protruding portion. The capacitor element includes a lower electrode provided on the third insulating film, a capacitor insulating film provided on the lower electrode, and an upper electrode provided on the capacitor insulating film.

REFERENCES:
patent: 2007/0034924 (2007-02-01), Takewaki et al.
patent: 2008/0217737 (2008-09-01), Oshida et al.
patent: 11-87650 (1999-03-01), None
patent: 2007-49089 (2007-02-01), None

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