SOI active pixel cell design with grounded body contact

Details SOI active pixel cell design with grounded body contact SOI active pixel cell design with grounded body contact

Filed on

1998-01-08

Date issued

1999-03-02

Examiner

Chaudhuri, Olik

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Charge transfer device

Other Related Categories

257291, 438404, H01L 3108

Type

Patent

Status

active

Patent number

058775218

Description

ABSTRACT:
A photosensitive device includes an array of active pixel sensor devices, each APS device being formed in an isolated cell of silicon. Each cell has an insulating barrier around it, and sits upon an insulating layer formed on an underlying substrate. A semiconductor connector making vertical contact between the pinning layer and the body of each APS device preferably replaces at least some portion of the insulating barrier adjacent to each cell. The semiconductor connector may be a single vertical connection for each cell or it may be an elongated strip connecting multiple APS devices. It may extend only to the underlying insulating layer or it may extend through the insulating layer to the substrate, with the substrate acting to interconnect and ground the pinning layer and the body of each APS device. The invention also includes the method of making the photosensitive device.

REFERENCES:
patent: 4006458 (1977-02-01), Booher
patent: 5008723 (1991-04-01), van der Have
patent: 5145802 (1992-09-01), Tyson et al.
patent: 5358879 (1994-10-01), Brady et al.
patent: 5559368 (1996-09-01), Hu et al.
patent: 5572045 (1996-11-01), Takahaski et al.
patent: 5587596 (1996-12-01), Chi et al.
patent: 5614744 (1997-03-01), Merrill
patent: 5789774 (1998-08-01), Merrill

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