Semiconductor variable capacitance element

Details Semiconductor variable capacitance element Semiconductor variable capacitance element

1988-11-09

1991-04-16

Hille, Rolf

357 235, 357 14, H01L 2978, H01L 2968, H01L 2992

Patent

active

050087380

ABSTRACT:
A semiconductor variable capacitance element can provide a stable capacitance value by making a direct current voltage constant applied between a capacitive region and a first capacitance electrode. The capacitive region is formed under the surface of a semiconductor substrate and the first capacitance electrode is capacitively coupled to a floating electrode insulated from the semiconductor substrate. The floating electrode stores electric charge to build up an electrical potential in the floating electrode according to the stored amount of electric charge to thereby determine an amount of capacitance of the capacitive region.

REFERENCES:
patent: 4199772 (1980-04-01), Natori
patent: 4816894 (1989-03-01), Hattori

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