Finfet devices and methods for manufacturing the same

Details Finfet devices and methods for manufacturing the same Finfet devices and methods for manufacturing the same

2008-01-23

2010-11-02

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S136000, C438S268000, C438S138000, C438S156000, C257SE21411, C257S327000, C257S328000, C257S302000

Reexamination Certificate

active

07824969

ABSTRACT:
Disclosed herein is a tunneling fin field effect transistor comprising a fin disposed on a box layer disposed in a wafer; the wafer comprising a silicon substrate and a buried oxide layer. The fin comprises a silicide body that comprises a first silicide region and a second silicide region and forms a short between N and P doped regions. The silicide body is disposed on a surface of the buried oxide layer. A tunneling device disposed between the first silicide region and the second silicide region; the tunneling device comprising a first P-N junction. A gate electrode is further disposed around the fin; the gate electrode comprising a second P-N junction, and a third silicide region; the third silicide region forming a short between N and P doped regions in the gate electrode.

REFERENCES:
patent: 7473964 (2009-01-01), Izumida
patent: 2009/0008705 (2009-01-01), Zhu et al.
patent: 2009/0020764 (2009-01-01), Anderson et al.

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