Coherent light generators – Particular beam control device – Tuning
Reexamination Certificate
2007-11-12
2010-11-09
Nguyen, Dung T (Department: 2828)
Coherent light generators
Particular beam control device
Tuning
C372S009000, C372S029020
Reexamination Certificate
active
07830926
ABSTRACT:
This description relates to an apparatus, a method of manufacturing, and a method of tuning optical and/or electrical parameters of semiconductor devices and materials, thin film materials, or other devices. In one example, a laser is tuned to produce an adjustable output wavelength by coupling the laser to a tuning material or base such as, for example, a piezoelectric base using a suitable attachment method. The laser includes of a tunable material that is sensitive to stress and/or strain. Stress and/or strain applied to the laser from the tuning material results in an electronically variable output wavelength. As an example, applying a voltage to a piezoelectric base that serves as a tuning material can cause the base to expand or contract, and the expansions and contractions from the base are coupled to the tunable material of the laser, thus varying the wavelength of the output light from the laser. Additionally, other devices that are sensitive to stress and/or strain can be adjoined in a similar manner and can result in an electronically variable output of the devices. Examples of other examples are disclosed herein.
REFERENCES:
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patent: 2003/0012249 (2003-01-01), Eisenbeiser
Adamiec et al. (submitted IDS: Pressured-tuned InGaAsSb/AIGaAsSb diode laser with 700 nm tuning range Article), Nov. 2004.
Adamiec, et al.; “Pressure-tuned InGaAsb/A1GaAsSb diode laser with 700 nm tuning range”, Appl. Phys. Lett., 2004, vol. 85, pp. 4292-4294.
Mailhiot, et al.; “Effects of Compressive Uniaxial Stress on the Electronic Structure of . . . ”; American Physical Society; 1987, vol. 36(5), pp. 2942-2945.
Yablonovitch et al.; “Extreme Selectivity in the lift-off of Epitaxial GaAs films”, Appl. Phys. Lett., 1987, vol. 51(26), pp. 2222-2224.
Yablonovitch, et al.; “Van der Waals Bonding of GaAs . . . ” Appl. Phys. Lett., 1990 , vol. 56(24), pp. 2419-2421.
Bryan Cave LLP
Nguyen Dung T
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